? 2010 ixys corporation, all rights reserved ds100295(11/10) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 1000 v v gs(th) v ds = v gs , i d = 250 a 3.0 6.0 v i gss v gs = 20v, v ds = 0v 100 na i dss v ds = v dss , v gs = 0v 10 a t j = 125 c 750 a r ds(on) v gs = 10v, i d = 2a, note 1 3.3 polar tm hiperfet tm power mosfet n-channel enhancement mode avalanche rated fast intrinsic diode IXFP4N100PM symbol test conditions maximum ratings v dss t j = 25c to 150c 1000 v v dgr t j = 25c to 150c, r gs = 1 m 1000 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c 2.5 a i dm t c = 25 c, pulse width limited by t jm 8.0 a i a t c = 25 c 4.0 a e as t c = 25 c 200 mj dv/dt i s i dm , v dd v dss , t j = 150 c 10 v/ns p d t c = 25 c 57 w t j - 55 ... +150 c t jm 150 c t stg - 55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c t sold plastic body for 10 s 260 c m d mounting torque 1.13/10 nm/lb.in. weight 2.5 g features z plastic overmolded tab for electrical isolation z avalanche rated z fast intrinsic diode z low package inductance advantages z high power density z easy to mount z space savings applications z switch-mode and resonant-mode power supplies z dc-dc converters z laser drivers z ac and dc motor drives z robotics and servo controls v dss = 1000v i d25 = 2.5a r ds(on) 3.3 g = gate d = drain s = source overmolded g d s advance technical information
IXFP4N100PM ixys reserves the right to change limits, test conditions, and dimensions. note 1. pulse test, t 300 s, duty cycle, d 2 %. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 terminals: 1 - gate 2 - drain 3 - source 12 3 isolated to-220 (ixfp...m) advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 4 a i sm repetitive, pulse width limited by t jm 16 a v sd i f = i s , v gs = 0v, note 1 1.3 v t rr 300 ns q rm 0.34 c i rm 5.30 a i f = 2a, -di/dt = 100a/ s v r = 100v, v gs = 0v symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 20v, i d = 2a, note 1 1.8 3.0 s c iss 1456 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 90 pf c rss 16 pf r gi gate input resistance 1.6 t d(on) 24 ns t r 36 ns t d(off) 37 ns t f 50 ns q g(on) 26 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 2a 9 nc q gd 12 nc r thjc 2.2 c/w resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 2a r g = 5 (external)
? 2010 ixys corporation, all rights reserved IXFP4N100PM fig. 1. output characteristics @ t j = 25oc 0 0.5 1 1.5 2 2.5 3 3.5 4 0123456789101112 v ds - volts i d - amperes v gs = 10v 8v 7v 5 v 6 v fig. 2. extended output characteristics @ t j = 25oc 0 1 2 3 4 5 6 7 8 0 5 10 15 20 25 30 35 v ds - volts i d - amperes v gs = 10v 8v 7 v 6 v 5 v fig. 3. output characteristics @ t j = 125oc 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 4 0 2 4 6 8 10121416182022242628 v ds - volts i d - amperes v gs = 10v 7v 5 v 6v fig. 4. r ds(on) normalized to i d = 2a value vs. junction temperature 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 -50-25 0 255075100125150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 4a i d = 2a fig. 5. r ds(on) normalized to i d = 2a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 012345678 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 0.5 1 1.5 2 2.5 3 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
IXFP4N100PM ixys reserves the right to change limits, test conditions, and dimensions. fig. 7. input admittance 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 2 4 6 8 10 12 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 2 4 6 8 10 12 14 16 0 5 10 15 20 25 30 35 40 q g - nanocoulombs v gs - volts v ds = 500v i d = 2a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width - seconds z (th)jc - oc / w ixys ref: f_4n100p(45-744)11-22-10-a
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